| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a dual-damascene wiring-formation technique effectively inhibiting a resist poisoning, capable of forming a wiring film having a high accuracy and improving the flexibility of a selection for the material of a second insulating film formed on a first insulating film forming a via in the formation of a dual-damascene wiring. <P>SOLUTION: A method for forming the wiring for a semiconductor device has a first insulating-film forming process forming the first insulating film on a semiconductor substrate, a via forming process forming the via to the first insulating film formed by the first insulating-film forming process and a filling process filling the via formed by the via forming process with a heat-resistant material, capable of being removed when a wiring trench is formed to the second insulating film and/or after that. The method further has a second insulating-film forming process forming the second insulating film on the first insulating film and a wiring-trench forming process forming the wiring trench to the second insulating film formed by the second insulating-film forming process. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
