| 摘要 |
<p>A method for manufacturing semiconductor device is provided to prevent gate leaning phenomenon due to thermal stress between the metal layer and the hard mask film by forming a capping layer as the double film. A method for manufacturing semiconductor device is comprised of steps: forming a recess trench(105) within the semiconductor substrate(100); forming a gate insulating layer, a conductive film, a barrier metal film, a metal layer and a hard mask film on the reset trench; forming a photoresist layer pattern blocking a part of the hard mask film by coating with the photoresist film on the hard mask film and patterning it; etching the metal film by a certain thickness while forming the hard mask film pattern by performing a fist etching the photoresist layer pattern with a mask; performing deposition of the first capping layer(200) on the semiconductor substrate in which the first etching is performed; forming the metal layer pattern and barrier metal film pattern by performing the second etching first capping layer and hard mask film pattern with the mask; performing deposition of the second capping layer(215) on the semiconductor substrate in which the second etching is performed; forming the gate stack(230) by performing the third etching the semiconductor substrate in which the second capping layer is formed.</p> |
