METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to control a threshold voltage and perform a local rapid thermal process inside a wafer by controlling a power of the lamp and a rotation speed of the wafer at the same time. A parallel line type lamp is formed in an upper part and a lower part of a wafer(10) in a line type. Respective line type lamps are composed of a first lamp array(11) and a second lamp array(12) where a plurality of lamps are arranged with a constant interval. The first lamp array in the upper part of the wafer and the second lamp array in the lower part of the wafer are arranged in a parallel direction. A rapid thermal process is differently performed in each line for controlling a temperature of an annealing region in case of the parallel line type lamp. The threshold voltage inside the wafer is uniformly controlled by performing the rapid thermal process by controlling a lamp power of a portion to require the control of the threshold voltage locally inside the wafer.