发明名称 Horizontally graded structures for electrochemical and electronic devices
摘要 The present invention provides a graded multilayer structure, comprising a support layer (1) and at least two layers (2, 3), wherein each of the at least two layers (2, 3) is at least partially in contact with the support layer (1), wherein the at least two layers (2, 3) differ from each other in at least one property selected from layer composition, porosity and conductivity, and wherein the at least two layers (2, 3) are arranged such that the layer composition, porosity and/or conductivity horizontally to the support layer (1) forms a gradient over the total layer area.
申请公布号 EP2031681(A1) 申请公布日期 2009.03.04
申请号 EP20070017110 申请日期 2007.08.31
申请人 THE TECHNICAL UNIVERSITY OF DENMARK 发明人 LARSEN, PETER HALVOR;LINEROTH, SOREN;HENDRIKSEN, PETER VANG;MOGENSEN, MOGENS
分类号 H01M4/88;H01M4/86;H01M8/12 主分类号 H01M4/88
代理机构 代理人
主权项
地址