SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form a thin film transistor having a high current drive performance by forming a gate insulating layer and a semiconductor layer consecutively. CONSTITUTION: A gate isolation layer(102) is formed on a gate electrode layer(101). A semiconductor layer(103) is formed on the gate isolation layer. A first n type buffer layer(104a) and a second n type buffer layer(104b) are formed on the semiconductor layer. The source electrode layer(105a) is formed on the first n type buffer layer. A drain electrode layer(105b) is formed on the second n type buffer layer. The semiconductor layer, the first type buffer layer, and the second type buffer layer comprise the oxide semiconductor. The first n type buffer layer and the second n type buffer layer have a higher carrier concentration than the semiconductor layer.