发明名称 |
Preparation method for patternization of metal electrodes in silicon solar cells |
摘要 |
The present invention relates to a preparation method for patternization of metal electrodes in silicon solar cells. After disposing an amorphous silicon layer on a silicon substrate processed by diffusion, laser light is projected on the amorphous silicon layer for patternization, and transforming the amorphous silicon with low optical conductivity into polysilicon with high optical conductivity thanks to the recrystallization process of the laser light. Then, after immersing the amorphous silicon layer in plating liquid, metal electrode can be formed accurately at the spots of the amorphous silicon layer patterned by laser light. No external voltage is required; plating reaction is induced by illumination directly. |
申请公布号 |
US8852995(B1) |
申请公布日期 |
2014.10.07 |
申请号 |
US201313959835 |
申请日期 |
2013.08.06 |
申请人 |
Atomic Energy Council-Institute of Nuclear Energy Research |
发明人 |
Su Yu-Han;Yang Tsun-Neng;Ma Wei-Yang;Chao Chien-Chang;Lan Shan-Ming |
分类号 |
H01L21/00;H01L31/028;H01L31/068;H01L31/0224 |
主分类号 |
H01L21/00 |
代理机构 |
Rosenberg, Klein & Lee |
代理人 |
Rosenberg, Klein & Lee |
主权项 |
1. A preparation method for patternization of metal electrodes in silicon solar cells, comprising steps of:
diffusing impurities to one surface of a silicon substrate for forming a p-n junction layer on the surface of said silicon substrate; disposing a back electrode layer on the other surface of said silicon substrate; disposing an amorphous silicon layer on said p-n junction layer; projecting a laser beam on said amorphous silicon layer for forming an electrode pattern at the spots projected by said laser beam; and immersing said amorphous silicon layer in a plating liquid and forming a metal electrode on said electrode pattern. |
地址 |
Taoyuan County TW |