发明名称 DEVICE AND MANUFACTURING METHOD FOR THE SAME, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a wire with the excellent electric characteristics, or a wire with the stable electric characteristics.SOLUTION: A manufacturing method for a semiconductor device includes: forming a first insulating film on a substrate; forming a second insulating film on the first insulating film; forming a first opening by removing a part of the first insulating film and a part of the second insulating film; forming a first conductor in the first opening and on an upper surface of the second insulating film; forming a second conductor by flattening a surface of the first conductor and removing a part of the first conductor; forming a third insulating film on the second insulating film and the second conductor; providing a second opening to expose a part of an upper surface and a part of a side surface of the second conductor by removing a part of the second insulating film and a part of the third insulating film; forming a third conductor on an upper surface of the third insulating film and in the second opening in contact with the second conductor; and forming a fourth conductor by removing a part of the third conductor.SELECTED DRAWING: Figure 1
申请公布号 JP2016174144(A) 申请公布日期 2016.09.29
申请号 JP20160018620 申请日期 2016.02.03
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYAIRI HIDEKAZU;MORIWAKA TOMOAKI
分类号 H01L21/768;G09F9/30;H01L21/28;H01L21/336;H01L21/8242;H01L21/8247;H01L23/522;H01L27/105;H01L27/108;H01L27/115;H01L27/146;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/768
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