发明名称 |
DEVICE AND MANUFACTURING METHOD FOR THE SAME, AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a wire with the excellent electric characteristics, or a wire with the stable electric characteristics.SOLUTION: A manufacturing method for a semiconductor device includes: forming a first insulating film on a substrate; forming a second insulating film on the first insulating film; forming a first opening by removing a part of the first insulating film and a part of the second insulating film; forming a first conductor in the first opening and on an upper surface of the second insulating film; forming a second conductor by flattening a surface of the first conductor and removing a part of the first conductor; forming a third insulating film on the second insulating film and the second conductor; providing a second opening to expose a part of an upper surface and a part of a side surface of the second conductor by removing a part of the second insulating film and a part of the third insulating film; forming a third conductor on an upper surface of the third insulating film and in the second opening in contact with the second conductor; and forming a fourth conductor by removing a part of the third conductor.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016174144(A) |
申请公布日期 |
2016.09.29 |
申请号 |
JP20160018620 |
申请日期 |
2016.02.03 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MIYAIRI HIDEKAZU;MORIWAKA TOMOAKI |
分类号 |
H01L21/768;G09F9/30;H01L21/28;H01L21/336;H01L21/8242;H01L21/8247;H01L23/522;H01L27/105;H01L27/108;H01L27/115;H01L27/146;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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