| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for wet etching of a silicon wafer, by which a damage-less silicon wafer can be obtained without causing the generation of NOx gas as happened in wet etching with a mixed acid solution.SOLUTION: A method for wet etching of a silicon wafer comprises the steps of: using a chemical solution containing polyoxometalate which reversibly performs a redox reaction and hydrofluoric acid for etching the silicon wafer 2; recovering the post-etching chemical solution; separating the polyoxometalate from the chemical solution; and performing an oxidation process on the reduced polyoxometalate for reuse for etching.SELECTED DRAWING: Figure 1 |
