| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging sensor that is able to restrict occurrence of hot carrier.SOLUTION: This solid-state imaging sensor comprises: a photoelectric conversion part of second conduction type, as a pixels, which is formed on a surface layer that is one side of a semiconductor substrate of first conduction type, and which converts light made incident from one side, into charges; a charge holding part of second conduction type formed on a semiconductor substrate for accumulating charges generated in the photoelectric conversion part; a multiplication gate electrode formed on the semiconductor substrate via an insulation film so as to be capacity-coupled with a portion where the charge holding part is formed; and an element separation area formed on an inner edge of the pixel and electrically separating adjacent pixels. The multiplication gate electrode and the element separation area are formed separately from each other, as viewed from front of one side.SELECTED DRAWING: Figure 3 |
