PHOTOELECTRIC CONVERSION ELEMENT, AND IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: an imaging device superior in imaging performance; an imaging device which can take an image readily even under the condition of a low illuminance; an imaging device low in power consumption; an imaging device small in the variation in characteristic among pixels; or an imaging device of high integration scale.SOLUTION: A photoelectric conversion element comprises: a first electrode; a second electrode; a first layer; and a second layer. In the photoelectric conversion element, the first layer is provided between the first and second electrodes; the second layer is provided between the first layer and the second electrode; the first layer includes selenium; and the second layer includes In, Ga, Zn and O. The second layer may be a layer including In-Ga-Zn oxide, and the selenium may be crystal selenium. The photoelectric conversion element may be arranged so that the first layer has a function as a photoelectric conversion layer, and the second layer has a function as a hole-injection inhibitory layer. The In-Ga-Zn oxide may be an oxide having c-axis oriented crystal.SELECTED DRAWING: Figure 1