| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for annealing copper by forming a copper layer on a substrate and treating the copper layer under annealing gas environment in the integrated treating device. SOLUTION: This method for annealing a copper layer includes a step (301) that forms the copper layer on a substrate by electroplating in an integrated treatment device, and steps (303, 305, and 307) that treat the copper layer in gas environment inside the chamber of the integrated treatment device. Also, this apparatus for the method is equipped with an electroplating chamber for forming the copper layer on the substrate, a cleaning station for cleaning the substrate, an annealing chamber having an annealing gas source and a heated substrate-supporting device, and a transfer mechanism for conveying the substrate to the integrated treatment device.
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