发明名称 Reduction of the contact resistance in organic field-effect transistors with palladium contacts by using phosphines and metal-containing phosphines
摘要 A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.
申请公布号 US2005167703(A1) 申请公布日期 2005.08.04
申请号 US20050045511 申请日期 2005.01.31
申请人 KLAUK HAGEN;SCHMID GUNTER;ZSCHIESCHANG UTE;HALIK MARCUS;TERZOGLU EFSTRATIOS 发明人 KLAUK HAGEN;SCHMID GUNTER;ZSCHIESCHANG UTE;HALIK MARCUS;TERZOGLU EFSTRATIOS
分类号 H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/06 主分类号 H01L51/00
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