发明名称 |
Reduction of the contact resistance in organic field-effect transistors with palladium contacts by using phosphines and metal-containing phosphines |
摘要 |
A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.
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申请公布号 |
US2005167703(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050045511 |
申请日期 |
2005.01.31 |
申请人 |
KLAUK HAGEN;SCHMID GUNTER;ZSCHIESCHANG UTE;HALIK MARCUS;TERZOGLU EFSTRATIOS |
发明人 |
KLAUK HAGEN;SCHMID GUNTER;ZSCHIESCHANG UTE;HALIK MARCUS;TERZOGLU EFSTRATIOS |
分类号 |
H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/06 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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地址 |
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