| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory capable of efficiently driving a word line and a plate line in small-scale circuit constitution, and its driving method. SOLUTION: The ferroelectric memory includes a memory cell array where a plurality of memory cells with a ferroelectric capacitor are arranged, the plurality of word lines, the plurality of plate lines, and a plurality of word line driving circuits. The word line driving circuit 30 is provided with a driver DRV for driving the word line WL, a transfer transistor TRA provided between the driver DRV and the word line WL, and a gate control circuit 32. The gate control circuit 32 performs the gate control of turning on the transfer transistor TRA, and after the transfer transistor TRA is turned on, performs the gate control of turning off the transfer transistor TRA before the word line WL is boosted (before the plate line PL is driven). COPYRIGHT: (C)2006,JPO&NCIPI
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