| 摘要 |
FIELD: chemistry. ^ SUBSTANCE: method of manufacturing cadmium telluride monocrystal lies in loading polycrystal half-product into crucible, hermetization with further crucible vacuuming, melting of half-product, cooling of obtained ingot, its standing at certain temperature and further cooling to room temperature; polycrystal half-product is loaded into crucible together with pure cadmium sample, whose weight is determined by Clapeyron-Mendeleev equation, crucible is exhausted to pressure 10-6-10-7 mm of mercury, half-product is melted, ensuring temperature gradient on height 1-5C/cm, half-product melt is stood at melting temperature during 2-4 hours, then half-product is cooled at rate 0.5-1,0C/hour to full crystallization; obtained crystal is cooled at rate 40-60C/hour to temperature 920-960C, crystal is stood at said temperature during 8-12 hours, then it is cooled again at rate 40-60C/hour to temperature 820-860C and stood at during 8-12 hours, then crystal is cooled to temperature 700-720C and stood during 8-12 hours, after which crystal is cooled at rate 10-20C/hour to room temperature and removed from crucible as end-product. ^ EFFECT: high perfection of microstructure and high optical characteristics. ^ 1 ex, 2 dwg |
