| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method of making a level difference due to dishing as small as possible without significantly increasing the film reduction amount of a polishing stop film, and to provide a method of manufacturing a semiconductor device. <P>SOLUTION: The method of manufacturing the semiconductor device 20 includes a process of forming a nitride film 23 having an opening to expose a semiconductor substrate 21 and forming a groove 24 in the semiconductor substrate 21 using the nitride film 23 as a mask. Further, the method includes a process of depositing an oxide film 26 entirely over the semiconductor substrate 21 such that the upper surface of the oxide film 26 above the groove 24 is positioned to be higher than the surface of the nitride film 23. Furthermore, the method includes a process of polishing the oxide film 26 using ceria slurry as an abrasive until the nitride film 23 is exposed, and a polishing selection ratio defined as the ratio of the polishing speed of the oxide film 26 to the polishing speed of the nitride film 23 is adjusted to 7 to 11. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
