| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that can suppress stable degradation of current detection, and conducting stable constant-current control. SOLUTION: The semiconductor integrated circuit device is provided with a first MOS transistor M1, a second MOS transistor M2, a first operational amplifier 21, a third MOS transistor M3, and a second operational amplifier 22, and that controls current at an output terminal to be constant. The wiring resistor R2 of a drain wiring of the second MOS transistor is formed in a second layer 33, which differs from a first layer 41, wherein a phase compensating capacity is formed, in a region with the same plane position as a phase compensating capacity C1, and an electrode 43 is formed in a third layer 32 located between the first and second layers, being opposite to the electrode of the phase compensation capacity, and with a constant voltage applied to the electrode. COPYRIGHT: (C)2010,JPO&INPIT |
