| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method thereof are provided to reduce capacitance due to the top part of a conductive layer and a control gate by making a distance between control gates more distant than a distance between floating gates of a memory cell. CONSTITUTION: A plurality of memory cells(M0-Mn), source and drain select transistors(SST,DST) are included. Memory cells includes a floating gate(220a), a dielectric film(230) and control gates(240a) laminated successively. The source and drain select transistors includes a first conductive layer(220) and a second conductive layer(240) laminated successively.</p> |
