| 摘要 |
A substrate processing apparatus includes a process chamber, a substrate support, a first gas supply unit including a first gas dispersion unit, a second gas supply unit including a second gas dispersion unit, and a plurality of dispersion pipes connecting the process chamber and the second gas dispersion unit. An area of an inner surface of the second gas dispersion unit is smaller than a sum of an area of an inner surface of the first gas dispersion unit and areas of outer surfaces of the plurality of dispersion pipes. The substrate processing apparatus may reduce at least one of the amounts of residual first gas and residual second gas wherein the byproducts generated by the reaction between the residual first gas and the residual second gas hinder a desired chemical reaction in forming a film by supplying the first gas and the second gas in a cycle. |
