Semiconductor Structure with Inhomogeneous Regions

摘要

A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.

主权项

1. A semiconductor heterostructure, comprising:
an active region configured to at least one of: emit or sense, target radiation having a target wavelength; a contact; and a group III nitride semiconductor layer located between the active region and the contact, the group III semiconductor layer including a plurality of inhomogeneous regions arranged within multiple levels of the semiconductor layer, each having a set of attributes differing from a group III nitride material forming the group III semiconductor layer, wherein the plurality of inhomogeneous regions include at least one reflective region and at least one conductive region.