| 摘要 |
[Abstract] Provided is a copper alloy sputtering target, characterized in that the oxygen content, as determined by charged particle activation analysis, is 0.6 wt ppm or less, or the oxygen content is 2 wt ppm or less, and the carbon content is 0.6 wt ppm or less. Also provided is a method for manufacturing a copper alloy sputtering target, characterized in that a copper starting material is melted in a vacuum or inert gas atmosphere, a reducing gas then added to the atmosphere during melting, and then alloy elements are added to the molten metal to alloy the metal, and the ingot obtained thereby is worked to a target shape. The present invention addresses the problem of providing a copper alloy sputtering target that produces few particles during sputtering, and a method for manufacturing the same. |
