发明名称 Dynamic burst length output control in a memory
摘要 A memory, a system and a method for controlling dynamic burst length control data can generate clocks for both an upstream counter and a downstream counter by using substantially the same latency delayed received command indications. A downstream clock generation circuit generates a clock signal from a received command indication delayed by both a delay locked loop and latency delays stored in latency control circuits. An upstream clock generation circuit generates a clock signal from the received command indication delayed by the delay locked loop and capture indications from the latency control circuits.
申请公布号 US8879337(B1) 申请公布日期 2014.11.04
申请号 US201313867544 申请日期 2013.04.22
申请人 Micron Technology, Inc. 发明人 Kwak Jongtae
分类号 G11C7/10;G11C7/22 主分类号 G11C7/10
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A memory device comprising: a plurality of latches configured to latch burst length control data; a first counter, coupled to the plurality of latches, configured to generate a latch signal to each of the plurality of latches; a second counter, coupled to the plurality of latches, configured to generate an output enable signal to each of the plurality of latches; a first circuit coupled to the first counter and the plurality of latches and configured to generate a first clock signal for the first counter responsive to latency delays of the memory device, the first circuit further configured to store the burst length control data; and a second circuit coupled to the second counter and configured to generate a second clock signal for the second counter responsive to a received command and the latency delays of the memory device.
地址 Boise ID US
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