发明名称 半導体装置
摘要 A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.
申请公布号 JP5618970(B2) 申请公布日期 2014.11.05
申请号 JP20110254567 申请日期 2011.11.22
申请人 株式会社半導体エネルギー研究所 发明人 梅崎 敦司
分类号 G09G3/36;G02F1/133;G02F1/1368;G09G3/20;G09G3/30;H01L29/786;H01L51/50;H05B33/14 主分类号 G09G3/36
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