| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device for easily forming a contact hole when forming a deep contact hole and improving resistance against hydrogen. SOLUTION: The ferroelectric memory device 1 comprises: a first interlayer insulating film 3; a ferroelectric capacitor 4; an insulating hydrogen barrier film 5; a second interlayer insulating film 6; and a contact hole 7 passing through the second interlayer insulating film 6, the insulating hydrogen barrier film 5, and the first interlayer insulating film 3. The insulating hydrogen barrier film 5 is made of a first insulating hydrogen barrier film 5a and a second insulating hydrogen barrier film 5b; the first insulating hydrogen barrier film 5a forms a first sidewall layer 19a at the sidewall section of the ferroelectric capacitor 4; and the second insulating hydrogen barrier film 5b forms a second sidewall layer 19b while being provided on the first sidewall layer 19a, and is formed by covering an upper electrode 16 and the first interlayer insulating film 3 in the ferroelectric capacitor 4. COPYRIGHT: (C)2007,JPO&INPIT
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