| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor thin-film transistor and a manufacturing method for the organic semiconductor thin-film transistor in which pentacene crystal axis misalignment at the source electrode end and the drain electrode end, which is an essential problem of an organic semiconductor thin-film transistor of a bottom gate/bottom contact type, is eliminated and hole current can be increased. SOLUTION: The organic semiconductor thin-film transistor of a bottom gate/bottom contact type comprises a flattening layer 7 formed continuously between a source electrode 5 and a drain electrode 6 for moderating a height-level difference between both electrode ends, wherein the flattening layer 7 has control over crystal orientation, thereby forming an organic semiconductor layer over a predetermined portion of the top of the flattened source electrode, the flattening layer, and the drain electrode. COPYRIGHT: (C)2008,JPO&INPIT
|
