| 摘要 |
Laser nanostructuring and microstructuring of silicon using a laser-induced plasma for the processing of the processing laser beam. The method according to the invention is characterised in that it comprises a step of ablation wherein a first, ablation pulsed laser beam is directed, with a fluence in the range of 10 - 100 J·cm-2, onto the surface of a metal sample generating a laser-induced plasma, and a processing step wherein a second, processing pulsed laser beam, is directed, with a fluence of 0,3 Jcm-2, delayed by between 0.1 and 1 microseconds in relation to the ablation laser beam, onto a silicon surface close to the laser-induced plaza such that said second laser beam passes through said plasma perpendicularly to the plasma expansion axis. |
