| 摘要 |
The invention relates to a method for producing a Hall effect sensor, wherein first of all an insulating layer (20) is applied to a wafer (10) having an ASIC or is integrated into the wafer, a Hall effect layer (30), consisting for example of InSb or another III-V semiconductor material, is arranged thereon, and is then recrystallised in some areas by means of a laser (40). For thermal protection of the ASIC the insulating layer may be porous or may have a cavity or reflective layer. |
