发明名称 |
DEPOSITION APPARATUS AND DEPOSITION METHOD |
摘要 |
According to one embodiment, a deposition apparatus includes a plasma gun, a detector, and a controller. The plasma gun is capable of ejecting a plasma gas, and is capable of forming a film on a work piece exposed to the plasma gas. The detector detects a temperature or a luminous intensity in the plasma gas in a direction of ejection of the plasma gas. The controller controls a distance between the work piece and the plasma gun based on the temperature or the luminous intensity obtained from the detector, so that the plasma gas has a temperature in a range from a first temperature to a second temperature or a luminous intensity in a range from a first luminous intensity to a second luminous intensity is irradiated to the work piece. |
申请公布号 |
US2016273110(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
US201514843729 |
申请日期 |
2015.09.02 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Sanda Hiroshi;Nagumo Eiichi;Saito Makoto |
分类号 |
C23C16/52;C23C16/513 |
主分类号 |
C23C16/52 |
代理机构 |
|
代理人 |
|
主权项 |
1. A deposition apparatus comprising:
a plasma gun being capable of ejecting a plasma gas, and being capable of forming a film on a work piece exposed to the plasma gas; a detector detecting a temperature or a luminous intensity in the plasma gas in a direction of ejection of the plasma gas; and a controller controlling a distance between the work piece and the plasma gun based on the temperature or the luminous intensity obtained from the detector, so that the plasma gas having a temperature in a range from a first temperature to a second temperature or a luminous intensity in a range from a first luminous intensity to a second luminous intensity being irradiated to the work piece. |
地址 |
Tokyo JP |