发明名称 DEPOSITION APPARATUS AND DEPOSITION METHOD
摘要 According to one embodiment, a deposition apparatus includes a plasma gun, a detector, and a controller. The plasma gun is capable of ejecting a plasma gas, and is capable of forming a film on a work piece exposed to the plasma gas. The detector detects a temperature or a luminous intensity in the plasma gas in a direction of ejection of the plasma gas. The controller controls a distance between the work piece and the plasma gun based on the temperature or the luminous intensity obtained from the detector, so that the plasma gas has a temperature in a range from a first temperature to a second temperature or a luminous intensity in a range from a first luminous intensity to a second luminous intensity is irradiated to the work piece.
申请公布号 US2016273110(A1) 申请公布日期 2016.09.22
申请号 US201514843729 申请日期 2015.09.02
申请人 Kabushiki Kaisha Toshiba 发明人 Sanda Hiroshi;Nagumo Eiichi;Saito Makoto
分类号 C23C16/52;C23C16/513 主分类号 C23C16/52
代理机构 代理人
主权项 1. A deposition apparatus comprising: a plasma gun being capable of ejecting a plasma gas, and being capable of forming a film on a work piece exposed to the plasma gas; a detector detecting a temperature or a luminous intensity in the plasma gas in a direction of ejection of the plasma gas; and a controller controlling a distance between the work piece and the plasma gun based on the temperature or the luminous intensity obtained from the detector, so that the plasma gas having a temperature in a range from a first temperature to a second temperature or a luminous intensity in a range from a first luminous intensity to a second luminous intensity being irradiated to the work piece.
地址 Tokyo JP