| 摘要 |
PROBLEM TO BE SOLVED: To provide a high electron mobility transistor (HEMT) device.SOLUTION: A high electron mobility transistor includes a heterojunction, a gate layer 308, and a gate electrode 310. The heterojunction includes a barrier layer 306 formed on a channel layer 304, and the barrier layer 306 and channel layer 304 contain a group III-V semiconductor material. The gate layer 308 contains a P type group III-V semiconductor material formed on the barrier layer 306. The gate electrode 310 is formed on the gate layer 308, and contains an indium tin oxide (ITO) bonded electrically to the gate layer 308. The gate electrode 310 and gate layer 308 have the substantially same length.SELECTED DRAWING: Figure 3 |
