| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being formed with a step structure while ensuring dimensional accuracy in the step structure.SOLUTION: The etching resistance of a spacer film 4 is set to be higher than that of a spacer film 5. Spacer films 4 and 5 are formed in order over the insulator layer 3 so that the inner face of an opening 3A is covered. The spacer film 5 is subjected to an anisotropic etching to make the same thinner. With this, the spacer film 5 is left in a step shape on the side wall of the spacer film 4, and the spacer film 5 on the top face and the bottom face of the opening 3A is exposed, and subsequently the spacer film 4 is subjected to an anisotropic etching to make it thinner to expose a lower wiring 2.SELECTED DRAWING: Figure 1 |
