| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated device and its manufacturing method which reduce the wrap around of noise generated in the semiconductor integrated device to other blocks, and also obtain compatibility with an electrostatic discharge damage prevention effect. <P>SOLUTION: Pads connected to terminals are separated so that intervals between the pads are connected by using wires. By connecting the pads with pads of other same functional terminals, it is made possible to obtain the semiconductor device satisfying both wrap around reduction by separation and the electrostatic discharge damage prevention effect by connection between pads. <P>COPYRIGHT: (C)2008,JPO&INPIT |
