INTEGRATED SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an integrated compound semiconductor light-emitting device excellent in in-plane uniformity of light emission intensity and capable of large-area light emission like a surface light source.

SOLUTION: The integrated compound semiconductor light-emitting device has a plurality of light-emitting units. Each of the light-emitting units has at least a thin-film crystal layer having a first conductivity-type semiconductor layer 24, an active layer 25 and a second conductivity-type semiconductor layer 26. A main light extracting direction is a direction of the first conductivity-type semiconductor layer 24 side. First and second conductivity-type electrodes 27, 28 are formed on its opposite side. The light-emitting units 11 are electrically separated by inter-light-emitting unit separating trenches 12. An optically coupling layer 23 and a buffer layer 22 are commonly provided between the plurality of light-emitting units 11 on the main light extracting direction side than the first conductivity-type semiconductor layer 24.

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