| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the efficiency of a semiconductor optical element formed through ELO growth. <P>SOLUTION: Semiconductor thin layers 12 to 14, at least one of which is formed by ELO growth are laminated on a semiconductor substrate 11 and a metal mirror layer for reflecting light, can be arranged on the inside or in the lower part of an ELO growth mask material layer 15 to be used for the lamination of the semiconductor thin layers 12 to 14. Since the metal mirror layer reflects light, generated from the semiconductor thin layers 12 to 14 and radiates the reflected light to the front of the semiconductor optical element, the light emission efficiency is improved. Since the incident light is reflected by the metal mirror layer and reabsorbed, the light receiving efficiency is improved. <P>COPYRIGHT: (C)2008,JPO&INPIT |
