| 发明名称 | High polarization energy storage materials using oriented single crystals | ||
| 摘要 | A PIN-PMN-PT ferroelectric single crystal and a method of manufacture are disclosed. The PIN-PMN-PT ferroelectric single crystal is oriented and polarized along a single crystallographic direction. The PIN-PMN-PT ferroelectric single crystal ferroelectric has increased remnant polarization. | ||
| 申请公布号 | US8894765(B1) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201012945390 | 申请日期 | 2010.11.12 |
| 申请人 | TRS Technologies, Inc. | 发明人 | Hackenberger Wesley S.;Alberta Edward F. |
| 分类号 | C30B1/02 | 主分类号 | C30B1/02 |
| 代理机构 | McNees Wallace & Nurick LLC | 代理人 | McNees Wallace & Nurick LLC |
| 主权项 | 1. A high energy density single crystal, comprising: a PIN-PMN-PT ferroelectric single crystal oriented and polarized along a single crystallographic directions; wherein the PIN-PMN-PT ferroelectric single crystal is a rhombohedral PMN-PIN-PT ferroelectric single crystal oriented and polarized singularly along a <111> crystallographic direction and the high energy density single crystal has a remnant polarization value larger than 38 μC/cm2. | ||
| 地址 | State College PA US | ||