发明名称 Thermal CVD synthesis of nanostructures
摘要 The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.
申请公布号 US2005042465(A1) 申请公布日期 2005.02.24
申请号 US20030646360 申请日期 2003.08.22
申请人 CLEMSON UNVIERSITY 发明人 RAO APPARAO M.;RAO RAHUL
分类号 B32B9/04;B32B15/04;C23C;C23C16/00;C23C16/06;C30B25/00;C30B29/60;(IPC1-7):B32B15/04 主分类号 B32B9/04
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