| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge type semiconductor laser increasing an optical output by improving a kink-free level. SOLUTION: The semiconductor laser 10 has a first conductivity type lower clad layer 11, a second conductivity type upper clad layer 12 with a ridge section 12a projected to an upper section and an active layer 13 held by the lower clad layer 11 and the upper clad layer 12 on a first conductivity type semiconductor substrate 14. In the semiconductor laser 10, upper electrodes 15 are formed on the top face sides on both sides of the ridge section 12a of the upper clad layer 12, and a lower electrode 16 is formed on the underlying side of the semiconductor substrate 14 at the same time. COPYRIGHT: (C)2008,JPO&INPIT
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