| 摘要 |
<P>PROBLEM TO BE SOLVED: To decrease fluctuations in resistance value, which are caused by changes in leakage current due to manufacturing variances, and to provide a MOS transistor resistor having excellent temperature characteristics. Ž<P>SOLUTION: The MOS transistor resistor includes a first MOS transistor M1, which is used as a resistor, an input voltage source 1, which is connected to the source of the first MOS transistor and applies an input voltage Vin, and a gate voltage source 6, which is connected to the gate of the first MOS transistor and applies a gate voltage Vg. The gate voltage Vg and input voltage Vin are set in a range to cause the first MOS transistor to operate with the gate-source voltage and the source-drain voltage in the first MOS transistor in the unsaturated zone, and are set so that the temperature characteristics at the resistance value of the first MOS transistor may become constant. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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