| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device which reduces the height of a floating gate electrode, facilitating the formation of a control gate electrode, makes the coupling ratio of the floating gate electrode increased, and the control gate electrode and reducing interference effect between memory cell transistors. Ž<P>SOLUTION: In the non-volatile semiconductor storage device, a first insulating film 3 is formed on an element isolation region between the floating gate electrodes 2 adjacent to a second direction on a semiconductor substrate plane. In the control gate electrode 1, width D1 in a first direction on the element separation region is wider than width D2 in the first direction on an element region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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