| 摘要 |
PROBLEM TO BE SOLVED: To provide a hydroxyphenyl (meth)acrylate (co)polymer which has good solubility in a solvent and sufficiently reduces defects in coating when used in a semiconductor lithography solution and a method for producing the copolymer.SOLUTION: There is provided a hydroxyphenyl (meth)acrylate (co)polymer used in a semiconductor lithography process which is a (co)polymer produced by radical polymerization performed by controlling a reaction liquid temperature in a reactor to 70 to 100°C, wherein the peak area of a high polymer component having a molecular weight five times or more the weight average molecular weight (Mw) of the (co)polymer as measured by gel permeation chromatography (GPC) is less than 0.2% based on the total peak area.SELECTED DRAWING: None |
