| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using a nitride semiconductor, which is less likely to cause a current collapse phenomenon and has low on-resistance when operated by application of a high voltage.SOLUTION: A semiconductor device comprises: an electron transit layer 21 formed on a substrate 10; a first electron supply layer 22 formed on the electron transit layer 21; an electron generation layer 31 formed on the first electron supply layer 22; a second electron supply layer 32 formed on the electron generation layer 31; and a gate electrode 41, a source electrode 42 and a drain electrode 43 which are formed on the first electron supply layer 22. In the electron transit layer 21, a first two-dimensional electron gas 21a is generated, and in the electron generation layer 31, a second two-dimensional electron gas 31a is generated; and the electron generation layer 31 and the second electron supply layer 32 are formed between the gate electrode 41 and the drain electrode 43; and between the electron generation layer 31 and the second electron supply layer 32, and between the gate electrode 41 and the drain electrode 43, an insulation film 50 is formed.SELECTED DRAWING: Figure 2 |
