Semiconductor to Metal Transition for Semiconductor Devices

摘要

A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

主权项

1. A semiconductor device comprising a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers, wherein the first semiconductor region comprises:
a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers; a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration; and a damage region between the contact region and the transition region, the damage region being configured to reduce lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.