| 发明名称 |
INTEGRATED CIRCUIT HAVING DUAL MATERIAL CMOS INTEGRATION AND METHOD TO FABRICATE SAME |
| 摘要 |
In one aspect thereof the invention provides a structure that includes a substrate having a surface and a plurality of fins supported by the surface of the substrate. The plurality of fins are formed of Group IVA-based crystalline semiconductor material and are spaced apart and generally parallel to one another. In the structure at least some of the plurality of fins comprise an amorphous region forming a nanowire precursor structure that is located along a length of the fin where a Group III-V transistor is to be located. A method to fabricate the structure and other structures is also disclosed. |
| 申请公布号 |
US2016372471(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201614997773 |
申请日期 |
2016.01.18 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Leobandung Effendi |
| 分类号 |
H01L27/092;H01L21/84;H01L29/20;H01L21/8238;H01L21/324;H01L29/16;H01L27/12;H01L29/06 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure, comprising:
a substrate having a surface; and a plurality of fins supported by the surface of the substrate, the plurality of fins being comprised of Group IVA-based crystalline semiconductor material, the plurality of fins being spaced apart and generally parallel to one another; where at least some of the plurality of fins comprise an amorphous region forming a nanowire precursor structure that is located along a length of the fin where a Group III-V transistor is to be located. |
| 地址 |
Armonk NY US |
