HIGH QUALITY DEEP TRENCH OXIDE

摘要

An integrated circuit including a trench in the substrate with a high quality trench oxide grown on the sidewalls and the bottom of the trench where the ratio of the thickness of the high quality trench oxide formed on the sidewalls to the thickness formed on the bottom is less than 1.2. An integrated circuit including a trench with high quality oxide is formed by first growing a sacrificial oxide in dilute oxygen at a temperature in the range of 1050° C. to 1250° C., stripping the sacrificial oxide, growing high quality oxide in dilute oxygen plus trans 1,2 dichloroethylene at a temperature in the range of 1050° C. to 1250° C., and annealing the high quality oxide in an inert ambient at a temperature in the range of 1050° C. to 1250° C.

主权项

1. A semiconductor device, comprising:
a trench in a substrate with a depth in the range of 0.6 um to 6 um and with a trench oxide on the bottom and sidewalls of the trench where the ratio of the oxide thickness on the sidewalls of the trench to the thickness of the oxide on the bottom of the trench is less than 1.2.