| 发明名称 |
Method of Manufacturing an Electronic Component |
| 摘要 |
A method of manufacturing an electronic component includes applying solder paste to at least one electrically conductive portion of a package, applying a high-voltage depletion-mode transistor onto the solder paste, applying a low-voltage enhancement-mode transistor onto the solder paste, applying solder paste onto the high-voltage depletion-mode transistor, applying solder paste onto the low-voltage enhancement-mode transistor, applying an electrically conductive member onto the solder paste on the high-voltage depletion-mode transistor and onto the solder paste on the low-voltage enhancement-mode transistor to form an assembly, and heat treating the assembly to produce an electrical connection between the high-voltage depletion-mode transistor and the low-voltage enhancement-mode transistor via the electrically conductive member. |
| 申请公布号 |
US2016372439(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615252866 |
申请日期 |
2016.08.31 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Otremba Ralf;Schiess Klaus;Häberlen Oliver |
| 分类号 |
H01L23/00;H01L21/48;H01L23/495 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
applying solder paste to at least one electrically conductive portion of a package; applying a high-voltage depletion-mode transistor onto the solder paste; applying a low-voltage enhancement-mode transistor onto the solder paste; applying solder paste onto the high-voltage depletion-mode transistor; applying solder paste onto the low-voltage enhancement-mode transistor; applying an electrically conductive member onto the solder paste on the high-voltage depletion-mode transistor and onto the solder paste on the low-voltage enhancement-mode transistor to form an assembly; and heat treating the assembly to produce an electrical connection between the high-voltage depletion-mode transistor and the low-voltage enhancement-mode transistor via the electrically conductive member. |
| 地址 |
Villach AT |
