INTERCONNECTS HAVING SEALING STRUCTURES TO ENABLE SELECTIVE METAL CAPPING LAYERS

摘要

Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

主权项

1. An apparatus comprising:
an interconnect including a conductive material extending into a dielectric material layer; a capping layer including at least one of a refractory metal layer and a refractory metal alloy layer to cap a first portion of a surface of the interconnect; and a sealing structure including a silicon nitride layer adapted to cover the capping layer and a second portion of the surface including at least one gap of conductive material of the interconnect between the capping layer and the dielectric layer.