| 主权项 |
1. A method for manufacturing a first-etched and later-packaged normal chip three-dimensional system-in-package metal wiring board, comprising:
step 1, providing a metal substrate; step 2, pre-plating a surface of the metal substrate with a micro copper layer; step 3, applying a photoresist film, wherein a top surface and a bottom surface of the metal substrate which have been pre-plated with the micro copper layer are respectively applied with the photoresist film which can be exposed and developed; step 4, removing a part of the photoresist film on the bottom surface of the metal substrate, wherein the bottom surface of the metal substrate, which has been pasted with the photoresist film in step 3, is exposed and developed with a pattern using an exposure and development equipment, and the part of the photoresist film in the pattern is removed, so as to expose a region of the bottom surface of the metal substrate to be plated later; step 5, plating with a metal wiring layer, wherein the region of the bottom surface of the metal substrate from which the part of the photoresist film has been removed in step 4 is plated with the metal wiring layer; step 6, applying a photoresist film, wherein the bottom surface of the metal substrate in step 5 is applied with the photoresist film which can be exposed and developed; step 7, removing a part of the photoresist film on the bottom surface of the metal substrate, wherein the bottom surface of the metal substrate, which has been pasted with the photoresist film in step 6, is exposed and developed with a pattern using an exposure and development equipment, and the part of the photoresist film in the pattern is removed, so as to expose a region of the bottom surface of the metal substrate to be plated later; step 8, plating with a high-conductivity metal wiring layer, wherein the region of the bottom surface of the metal substrate from which the part of the photoresist film has been removed in step 7 is plated with the high conductivity metal wiring layer; step 9, removing the photoresist film, wherein the photoresist film on the surface of the metal substrate is removed; step 10, molding with an epoxy resin, wherein the molding with the epoxy resin for protection is performed on a surface of the metal wiring layer on the bottom surface of the metal substrate; step 11, grinding a surface of the epoxy resin, wherein the surface of the epoxy resin is ground after the molding with the epoxy resin has been performed; step 12, applying a photoresist film, wherein the top surface and the bottom surface of the metal substrate are applied with the photoresist film which can be exposed and developed after the surface of the epoxy resin has been ground in step 11; step 13, removing a part of the photoresist film on the top surface of the metal substrate, wherein the top surface of the metal substrate, which has been applied with the photoresist film in step 12, is exposed and developed with a pattern using an exposure and development equipment, and the part of the photoresist film in the pattern is removed, so as to expose a region of the top surface of the metal substrate to be etched later; step 14, chemical etching, wherein the chemical etching is performed in the region of the top surface of the metal substrate in which exposing and developing have been performed in step 13; step 15, plating with a metal layer, wherein the top surface of the metal substrate on which the chemical etching has been performed in step 14 is plated with the metal layer, so that a die pad and a lead are formed on the metal substrate; step 16, applying a photoresist film, wherein the top surface and the bottom surface of the metal substrate are applied with the photoresist film which can be exposed and developed after the plating with the metal layer has been performed in step 15; step 17, removing a part of the photoresist film on the top surface of the metal substrate, wherein the top surface of the metal substrate, which has been applied with the photoresist film in step 16, is exposed and developed with a pattern using an exposure and development equipment, and the part of the photoresist film in the pattern is removed, so as to expose a region of the top surface of the metal substrate to be plated later; step 18, plating with a metal pillar, wherein the region of the top surface of the metal substrate from which the part of the photoresist film has been removed in step 17 is plated with the metal pillar; step 19, removing the photoresist film, wherein the photoresist film on the surface of the metal substrate is removed; step 20, coating with an adhesive material, wherein a top surface of the die pad is coated with a conductive or non-conductive adhesive material after the die pad has been formed in step 15; step 21, bonding dies, wherein a chip is bonded in the conductive or non-conductive adhesive material in step 20; step 22, bonding a metal wire, wherein the metal wire is bonded between a top surface of the chip and a top surface of the lead; step 23, encapsulating, wherein the molding with a molding material is performed on the top surface of the metal substrate in step 22; step 24, grinding a surface of an epoxy resin, wherein the surface of the epoxy resin is ground after the molding with the epoxy resin has been performed in step 23; and step 25, plating with an anti-oxidizing metal layer or coating with an antioxidant, wherein an exposed surface of the metal substrate is plated with the anti-oxidizing metal layer or is coated with the antioxidant after the surface of the epoxy resin has been ground in step 24. |
