INTERPOSER WITH LATTICE CONSTRUCTION AND EMBEDDED CONDUCTIVE METAL STRUCTURES

摘要

A lattice structure is formed in a non-silicon interposer substrate to create large cells that are multiples of through hole pitches to act as islands for dielectric fields. Each unit cell is then filled with a dielectric material. Thereafter, holes (i.e., through holes or blind holes) are created within the dielectric material in the cells. After hole formation, a conductive metal is formed into each of the holes providing an interposer. This method can enable fine pitch processing in organic-based materials, isolates the thermal coefficient of expansion (TCE) stress from metal vias to low TCE carriers and creates a path to high volume, low costs components in panel form.

主权项

1. A method of forming an interposer, said method comprising:
creating a lattice structure having a plurality of unit cells in a non-silicon interposer substrate; filling each unit cell of said plurality of unit cells with a dielectric material; forming a plurality of holes into said dielectric material of each unit cell; and forming a conductive structure in each hole of said plurality of holes.