| 发明名称 |
Method for Using Heated Substrates for Process Chemistry Control |
| 摘要 |
A method of controlling doping of a substrate, the method comprising: providing the substrate in a process chamber of a doping system; performing a doping process to impart a target dose on a surface of the substrate using a abruptness depth control technique; and controlling selected operating variables of plasma doping in order to meet doping objectives. |
| 申请公布号 |
US2016372327(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615099031 |
申请日期 |
2016.04.14 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Ventzek Peter L.G.;Ueda Hirokazu |
| 分类号 |
H01L21/223;H01L21/67;H01L21/683;H01L21/324;H01L21/02 |
主分类号 |
H01L21/223 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of controlling doping of a substrate, the method comprising:
providing the substrate in a process chamber of a doping system; performing a doping process to impart a target dose on a surface of the substrate using an abruptness depth control technique; and controlling selected operating variables of plasma doping in order to meet doping objectives. |
| 地址 |
Tokyo JP |
