发明名称 NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS
摘要 A nonvolatile semiconductor storage apparatus is provided. To a data node and a reference node, a first transistor and a second transistor are respectively connected. In a data state determining operation, in the case where voltage is applied to the data node and reference node, the first and second transistors operate as precharge transistors in a first operation mode, and operate as mirror transistors in a second operation mode. The first and second operation modes are switched.
申请公布号 US2016372191(A1) 申请公布日期 2016.12.22
申请号 US201615219232 申请日期 2016.07.25
申请人 Panasonic Intellectual Property Management Co., Ltd. 发明人 NAKAYAMA MASAYOSHI;MURAKUKI YASUO;MARUYAMA TAKAFUMI
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A nonvolatile semiconductor storage apparatus comprising: a memory cell that includes at least a first terminal and a second terminal; a reference cell that includes at least a third terminal and a fourth terminal; a readout circuit connected to the first terminal and the third terminal; a first transistor connected to the first terminal; and a second transistor connected to the third terminal, wherein a gate of the first transistor and a gate of the second transistor are connected in common, the nonvolatile semiconductor storage apparatus further comprising a switch for electrically short-circuiting and disconnecting between the gates of the first and second transistors and the third terminal or the fourth terminal.
地址 Osaka JP