发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS |
摘要 |
A nonvolatile semiconductor storage apparatus is provided. To a data node and a reference node, a first transistor and a second transistor are respectively connected. In a data state determining operation, in the case where voltage is applied to the data node and reference node, the first and second transistors operate as precharge transistors in a first operation mode, and operate as mirror transistors in a second operation mode. The first and second operation modes are switched. |
申请公布号 |
US2016372191(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201615219232 |
申请日期 |
2016.07.25 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
NAKAYAMA MASAYOSHI;MURAKUKI YASUO;MARUYAMA TAKAFUMI |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile semiconductor storage apparatus comprising:
a memory cell that includes at least a first terminal and a second terminal; a reference cell that includes at least a third terminal and a fourth terminal; a readout circuit connected to the first terminal and the third terminal; a first transistor connected to the first terminal; and a second transistor connected to the third terminal, wherein a gate of the first transistor and a gate of the second transistor are connected in common, the nonvolatile semiconductor storage apparatus further comprising a switch for electrically short-circuiting and disconnecting between the gates of the first and second transistors and the third terminal or the fourth terminal. |
地址 |
Osaka JP |