Memory Gate Stack Structure

摘要

A memory gate stack structure ( 100 ) comprising a substrate layer ( 102 ) comprising a silicon-based material, a tunnel layer ( 104 ) formed on the substrate layer, a charge storage layer ( 106 ) formed on the tunnel layer and comprising a hafnium-aluminium-oxide-based material, a blocking layer ( 108 ) formed on the charge storage layer, and a gate layer ( 110 ) formed on the blocking layer.