发明名称 |
MANUFACTURE-FRIENDLY BUFFER LAYER FOR FERROELECTRIC MEDIA |
摘要 |
The present invention describes a method including: providing a substrate; forming a buffer layer epitaxially over the substrate with a manufacture-friendly process; forming a bottom electrode epitaxially over the buffer layer; and forming a ferroelectric layer epitaxially over the bottom electrode.
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申请公布号 |
US2009152684(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20070958773 |
申请日期 |
2007.12.18 |
申请人 |
WANG LI-PENG;MA QING;RAO VALLURI |
发明人 |
WANG LI-PENG;MA QING;RAO VALLURI |
分类号 |
H01L29/04;H01L21/02 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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