发明名称 MANUFACTURE-FRIENDLY BUFFER LAYER FOR FERROELECTRIC MEDIA
摘要 The present invention describes a method including: providing a substrate; forming a buffer layer epitaxially over the substrate with a manufacture-friendly process; forming a bottom electrode epitaxially over the buffer layer; and forming a ferroelectric layer epitaxially over the bottom electrode.
申请公布号 US2009152684(A1) 申请公布日期 2009.06.18
申请号 US20070958773 申请日期 2007.12.18
申请人 WANG LI-PENG;MA QING;RAO VALLURI 发明人 WANG LI-PENG;MA QING;RAO VALLURI
分类号 H01L29/04;H01L21/02 主分类号 H01L29/04
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